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- W4324139712 abstract "We propose a magnetic topological transistor based on MnBi$_{2}$Te$_{4}$, in which the on state (quantized conductance) and the off state (zero conductance) can be easily switched by changing the relative direction of two adjacent electric fields (parallel vs. antiparallel) applied within a two-terminal junction. We explain that the proposed magnetic topological transistor relies on a novel mechanism due to the interplay of topology, magnetism, and layer degrees of freedom in MnBi$_{2}$Te$_{4}$. Its performance depends substantially on film thickness and type of magnetic order. We show that on and off states of the transistor are robust against disorder due to the topological nature of the surface states. Our work opens an avenue for applications of layer-selective transport based on the topological van der Waals antiferromagnet MnBi$_{2}$Te$_{4}$." @default.
- W4324139712 created "2023-03-15" @default.
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- W4324139712 date "2023-03-14" @default.
- W4324139712 modified "2023-10-16" @default.
- W4324139712 title "Magnetic topological transistor exploiting layer-selective transport" @default.
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- W4324139712 doi "https://doi.org/10.1103/physrevresearch.5.013179" @default.
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