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• W4327718595 startingPage "e14643" @default.
• W4327718595 abstract "This study was conducted to determine whether the simultaneous injections of Ar+ ions and tetraethyl orthosilicate (TEOS) to a substrate are able to fabricate a film on the substrate. The Ar+ ion energy was 100 eV. After the injections, we found a film deposited on the substrate. Following the analyses of the film with X-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy, it was found that the deposited film was silicon dioxide (SiO2). We conclude that the low-energy Ar+ ion-beam-induced deposition method using TEOS is useful for the growth of SiO2 films." @default.
• W4327718595 created "2023-03-18" @default.
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• W4327718595 date "2023-04-01" @default.
• W4327718595 modified "2023-10-02" @default.
• W4327718595 title "Low-energy Ar+ ion-beam-induced chemical vapor deposition of silicon dioxide films using tetraethyl orthosilicate" @default.
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• W4327718595 doi "https://doi.org/10.1016/j.heliyon.2023.e14643" @default.
• W4327718595 hasPubMedId "https://pubmed.ncbi.nlm.nih.gov/37035367" @default.
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