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- W4327739257 abstract "In this work, a unified numerical model is used to determine the melting thresholds and to investigate early stages of melting of several crystalline semiconductors (Si, Ge, GaAs, CdTe and InP) irradiated by nanosecond laser pulses. A molten fraction approach is used for continuous transition over the melting point. The results are compared with previously published theoretical and experimental data. A survey on the thermophysical and optical properties of the selected materials has been carried out to gather the most relevant data on temperature dependent properties for the solid and liquid states of these semiconductors where such data are available. A generalization of the obtained results is established which enables evaluation of the melting thresholds for different semiconductors based on their properties and irradiation conditions (laser wavelength, pulse duration)." @default.
- W4327739257 created "2023-03-18" @default.
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- W4327739257 date "2023-03-16" @default.
- W4327739257 modified "2023-10-14" @default.
- W4327739257 title "On the Melting Thresholds of Semiconductors under Nanosecond Pulse Laser Irradiation" @default.
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- W4327739257 doi "https://doi.org/10.3390/app13063818" @default.
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