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- W4327750028 abstract "This study focuses on modelling and optimizing a new Si nanowire solar cell containing a SiGe/Si quantum well. Quantum efficiency measurements show that the proposed structure has a higher energy absorption advantage and stronger than that of a solar cell based on a standard Si p-i-n nanowire. As a result, the insertion of 14 layers of SiGe/Si quantum well improved the short circuit current density and the efficiency by a factor of about 1.24 and 1.37, respectively. The best concentration and radius values obtained are x = 0.05 and r = 0.190 µm, respectively, with a strain of less than 1%." @default.
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- W4327750028 date "2023-03-01" @default.
- W4327750028 modified "2023-10-18" @default.
- W4327750028 title "SiGe quantum wells implementation in Si based nanowires for solar cells applications" @default.
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- W4327750028 doi "https://doi.org/10.15251/djnb.2023.181.327" @default.
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