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- W4327941018 endingPage "116445" @default.
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- W4327941018 abstract "In this work, a Si/InAs/Ge junctionless tunneling field effect transistor (JL-TFET) based biosensor has been simulated. The proposed biosensor turns on with a 0.5 V bias supply voltage to make it suitable for low-power applications. Comparing results of Si/InAs/Ge JL-TFET based biosensors in which fixed (f)-gate is connected to control (c)-gate with that of in which f-gate is not connected to c-gate, a 90% decrease in drain current sensitivity was found. To further improve average subthreshold slope (SS) and sensitivity, we have proposed Si/InAs/Ge JL-TFET based biosensor with asymmetric gate oxide thickness. Simulation results show that the designed Si/InAs/Ge JL-TFET based biosensor with oxide thickness underneath c-gate TOX1 = 2 nm and oxide thickness underneath f-gate TOX2 = 3 nm for biomolecules having a dielectric constant value as 12 exhibits SS = 4.6 mV/dec, and sensitivity = 1.6e4. Accordingly, proposed biosensor has superior electrical characteristics in comparison with the recent state-of-the-art JL-TFET based biosensors." @default.
- W4327941018 created "2023-03-21" @default.
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- W4327941018 date "2023-06-01" @default.
- W4327941018 modified "2023-10-16" @default.
- W4327941018 title "Improving subthreshold slope in Si/InAs/Ge junctionless tunneling FET-based biosensor by using asymmetric gate oxide thickness for low-power applications: A numerical simulation study" @default.
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- W4327941018 doi "https://doi.org/10.1016/j.mseb.2023.116445" @default.
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