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- W4327956085 abstract "One hotspot of integrated optics is how to realize a highly integrated and high-gain on-chip amplification system in a thin film of lithium niobate on insulator (TFLNOI). Here, a low erbium-doped TFLNOI waveguide amplifier with shorter length is demonstrated using the photolithography-assisted oblique-reactive ion etching technique. A maximum net internal gain of 5.4 dB in the small-signal-gain regime is measured at the peak emission wavelength of 1531.35 nm for a waveguide length of 1.5 mm and an erbium-doped concentration of 0.1 mol. %, indicating a gain per unit length of 36 dB cm−1. This work paves the way for the monolithic integration of diverse active and passive photonic components on the TFLNOI platform." @default.
- W4327956085 created "2023-03-21" @default.
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- W4327956085 date "2023-03-20" @default.
- W4327956085 modified "2023-09-26" @default.
- W4327956085 title "A short high-gain waveguide amplifier based on low concentration erbium-doped thin-film lithium niobate on insulator" @default.
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- W4327956085 doi "https://doi.org/10.1063/5.0137678" @default.
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