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- W4328004942 abstract "Silicon layers doped with tellurium up to concentration (3-5)·10 20 cm -3 have been formed by ion implantation with subsequent pulsed laser annealing. It was shown that 70-90% of the introduced impurity is in the substitution position in the silicon lattice. Te hyperdoped silicon layers exhibit significant absorption (35-65%) both in the visible and near IR (1100-2500 nm) spectral ranges, and the absorption increases with increasing wavelength. The current-voltage and capacitance-voltage characteristics, as well as the photosensitivity of photodetectors based on Te-doped silicon layers have been presented and discussed. The residual structural defects in implanted Si layers have been investigated by deep-level transient spectroscopy. Keywords: silicon, hyperdoping, tellurium implantation, laser annealing, impurity subband, deep-level transient spectroscopy." @default.
- W4328004942 created "2023-03-22" @default.
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- W4328004942 date "2022-01-01" @default.
- W4328004942 modified "2023-10-14" @default.
- W4328004942 title "Te-hyperdoped silicon layers for visible-to-infrared photodiodes" @default.
- W4328004942 doi "https://doi.org/10.21883/tp.2022.15.55273.144-21" @default.
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