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- W4328010993 abstract "This research focuses on improving the draincurrent and radio-frequency properties of a T-gate E-mode AlInN/GaN HEMT with a BGaN back barrier. The results indicate that the boron gallium nitride back barrier may restrict the two-dimensional electron gas (2DEG) in the channel region and efficiently suppress the short channel effects. The BGaN back barrier HEMT with just a 2% B-component greatly improves the device’s analog and RF performance over a normal GaN buffer HEMT such as transconductance (0.15 S), intrinsic gain, early voltage (4.24 V), cut-off frequency (141 GHz) GFP (356 GHz), GTFP (4.6 THz), and transconductance frequency product (6.5 THz). Therefore, the device with a BGaN back barrier has considerable potential for use in applications requiring extremely linear devices that operate at high frequencies and high gain powers." @default.
- W4328010993 created "2023-03-22" @default.
- W4328010993 creator A5019188562 @default.
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- W4328010993 date "2022-12-19" @default.
- W4328010993 modified "2023-09-23" @default.
- W4328010993 title "BGaN back barrier engineering on E-mode T-gate double heterostructure HEMT for high RF applications" @default.
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- W4328010993 doi "https://doi.org/10.1109/rfm56185.2022.10065031" @default.
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