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- W4328051129 abstract "The present study has investigated two effective routes to improve the response time and the detection range for the n-MoS2/p-CuO (conventional p-n) heterojunction. In the first rectification, an insulating AlN layer was inserted between the MoS2 and CuO layer, which leads the traditional p-n junction to Semiconductor-Insulator-Semiconductor (SIS) with a superior carrier tunneling mechanism. Interestingly, the fabricated heterostructure exhibits self-powered and broad-range photoresponse. The response time (rise time and fall time) of the fabricated n-MoS2/p-CuO heterojunction decreases from 93.35 ms to 102.68 ms–11.31 ms and 12.73 ms with the insertion of ultrathin insulating AlN Layer. The higher responsivity and ultrafast photoresponse in n-MoS2/AlN/p-CuO (SIS) heterojunction can be ascribed to the carrier tunneling mechanism through the ultrathin-insulating AlN layer. In the second rectification, the detection range can be enhanced up to the UV region by adding a layer of MoS2 quantum dots (QDs) on the surface of the MoS2 layer. The fabricated n-MoS2 QDs/n-MoS2/AlN/p-CuO heterostructure shows photoresponse in a broad range from UV to NIR radiations. The obtained results demonstrate the n-MoS2/AlN/p-CuO (SIS) heterostructure with the addition of MoS2 QDs shows excellent potential for next-generation ultrafast optoelectronics applications." @default.
- W4328051129 created "2023-03-22" @default.
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- W4328051129 date "2023-06-01" @default.
- W4328051129 modified "2023-10-02" @default.
- W4328051129 title "Effective ways to enhance the performance of n-MoS2/p-CuO heterojunction based self-powered photodetectors" @default.
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- W4328051129 doi "https://doi.org/10.1016/j.solmat.2023.112285" @default.
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