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- W4328112194 abstract "Abstract We present an electro‐optic modulator exploiting a metamaterial made of an array of vanadium dioxide nanorods operating in epsilon‐near‐zero regime as the active switching material in a silicon waveguide. The modulator takes advantage of the insulator‐to‐metal transition of vanadium dioxide along with near‐zero effective permittivity to achieve a modulation depth of 19.7 dB µm –1 in a footprint of 1.6 µm × 1 µm over a broad range of wavelengths. Using simulations, we demonstrate how the effective permittivity of the metamaterial can be tuned to a near‐zero value by varying the nanorod geometry to increase the modulation depth. The paper further investigates a novel hexagonal array design using the metamaterial nanorods to obtain a lower insertion loss and high modulation depth. The results provide insight into the design of ultra‐compact epsilon‐near‐zero modulators with high operation frequencies and low insertion losses." @default.
- W4328112194 created "2023-03-22" @default.
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- W4328112194 date "2023-03-20" @default.
- W4328112194 modified "2023-10-18" @default.
- W4328112194 title "Electro‐optic modulator based on vanadium dioxide epsilon‐near‐zero nanorods embedded in silicon slot waveguide" @default.
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- W4328112194 doi "https://doi.org/10.1002/nano.202200258" @default.
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