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- W4328131613 abstract "Abstract Lead-free, silicon compatible materials showing large electromechanical responses comparable to, or better than conventional relaxor ferroelectrics, are desirable for various nanoelectromechanical devices and applications. Defect-engineered electrostriction has recently been gaining popularity to obtain enhanced electromechanical responses at sub 100 Hz frequencies. Here, we report record values of electrostrictive strain coefficients (M 31 ) at frequencies as large as 5 kHz (1.04×10 − 14 m 2 /V 2 at 1 kHz, and 3.87×10 − 15 m 2 /V 2 at 5 kHz) using A-site and oxygen-deficient barium titanate thin-films, epitaxially integrated onto Si. The effect is robust and retained even after cycling the devices > 5000 times. Our perovskite films are non-ferroelectric, exhibit a different symmetry compared to stoichiometric BaTiO 3 and are characterized by twin boundaries and nano polar-like regions. We show that the dielectric relaxation arising from the defect-induced features correlates very well with the observed giant electrostrictive response. These films show large coefficient of thermal expansion (2.36 ⋅ 10 − 5 /K), which along with the giant M 31 implies a considerable increase in the lattice anharmonicity induced by the defects. Our work provides a crucial step forward towards formulating guidelines to engineer large electromechanical responses even at higher frequencies in lead-free thin films." @default.
- W4328131613 created "2023-03-22" @default.
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- W4328131613 date "2023-03-21" @default.
- W4328131613 modified "2023-10-16" @default.
- W4328131613 title "Giant electromechanical response from defective non-ferroelectric epitaxial BaTiO3 integrated on Si (100)" @default.
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- W4328131613 doi "https://doi.org/10.21203/rs.3.rs-2661707/v1" @default.
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