FRINK Linked Data Fragments server

Matches in SemOpenAlex for { <https://semopenalex.org/work/W4328136384> ?p ?o ?g. }

• W4328136384 endingPage "127182" @default.
• W4328136384 startingPage "127182" @default.
• W4328136384 abstract "Cubic zincblende GaN films were grown by metalorganic vapour-phase epitaxy on 3C-SiC/Si (0 0 1) templates and characterized using Nomarski optical microscopy, atomic force microscopy, X-ray diffraction, and transmission-electron microscopy. In particular, structural properties were investigated of films where the growth temperature of a GaN epilayer varied in the range of 830 °C to 910 °C and the gas-phase V/III-ratio varied from 15 to 1200 at a constant reactor pressure of 300 Torr. It was observed that with increasing epi temperature at a constant V/III-ratio of 76, the film surface consisted of micrometer-sized elongated features aligned along [1 –1 0] up to a temperature of 880 °C. The zincblende phase purity of such samples was generally high with a wurtzite fraction of less than 1%. When grown above 880 °C the GaN surface morphology degraded and the zincblende phase purity reduced as a result of inclusions with the wurtzite phase. A progressive narrowing of the 002 reflection with increasing epi growth temperature suggested an improvement of the film mosaicity. With increasing V/III-ratio at a constant growth temperature of 880 °C, the film surface formed elongated features aligned along [1 –1 0] at V/III values between 38 and 300 but the morphology became granular at both lower and higher V/III values. The zincblende phase purity is high at V/III values below 300. A slight broadening of the 002 X-ray diffraction reflection with increasing V/III-ratio indicated a small degradation of mosaicity. Scanning electron diffraction analyses of cross-sectional transmission-electron micrographs taken of a selection of samples illustrated the spatial distribution, quantity and structure of wurtzite inclusions within the zincblende GaN matrix. Within the limits of this study, the optimum epilayer growth conditions at a constant pressure of 300 Torr were identified to be at a temperature around 860 °C to 880 °C and a V/III-ratio in the range of 23 to 76, resulting in relatively smooth, zincblende GaN films without significant wurtzite contamination." @default.
• W4328136384 created "2023-03-22" @default.
• W4328136384 creator A5014377164 @default.
• W4328136384 creator A5028033253 @default.
• W4328136384 creator A5043854005 @default.
• W4328136384 creator A5058293565 @default.
• W4328136384 creator A5066003664 @default.
• W4328136384 creator A5081938522 @default.
• W4328136384 creator A5084265731 @default.
• W4328136384 date "2023-06-01" @default.
• W4328136384 modified "2023-09-25" @default.
• W4328136384 title "MOVPE studies of zincblende GaN on 3C-SiC/Si(0 0 1)" @default.
• W4328136384 cites W1548993356 @default.
• W4328136384 cites W1983409314 @default.
• W4328136384 cites W1989291280 @default.
• W4328136384 cites W2000086477 @default.
• W4328136384 cites W2011965140 @default.
• W4328136384 cites W2012080824 @default.
• W4328136384 cites W2012208096 @default.
• W4328136384 cites W2016010809 @default.
• W4328136384 cites W2016216115 @default.
• W4328136384 cites W2018163751 @default.
• W4328136384 cites W2025362552 @default.
• W4328136384 cites W2032345898 @default.
• W4328136384 cites W2034178259 @default.
• W4328136384 cites W2034347741 @default.
• W4328136384 cites W2034814430 @default.
• W4328136384 cites W2035091394 @default.
• W4328136384 cites W2036295800 @default.
• W4328136384 cites W2047205370 @default.
• W4328136384 cites W2048529072 @default.
• W4328136384 cites W2052167141 @default.
• W4328136384 cites W2053064178 @default.
• W4328136384 cites W2054558702 @default.
• W4328136384 cites W2055978686 @default.
• W4328136384 cites W2065439720 @default.
• W4328136384 cites W2072046622 @default.
• W4328136384 cites W2081395634 @default.
• W4328136384 cites W2101833741 @default.
• W4328136384 cites W2152499401 @default.
• W4328136384 cites W2155449942 @default.
• W4328136384 cites W2314443005 @default.
• W4328136384 cites W2754167156 @default.
• W4328136384 cites W2756846866 @default.
• W4328136384 cites W2910427938 @default.
• W4328136384 cites W3092447143 @default.
• W4328136384 doi "https://doi.org/10.1016/j.jcrysgro.2023.127182" @default.
• W4328136384 hasPublicationYear "2023" @default.
• W4328136384 type Work @default.
• W4328136384 citedByCount "1" @default.
• W4328136384 countsByYear W43281363842023 @default.
• W4328136384 crossrefType "journal-article" @default.
• W4328136384 hasAuthorship W4328136384A5014377164 @default.
• W4328136384 hasAuthorship W4328136384A5028033253 @default.
• W4328136384 hasAuthorship W4328136384A5043854005 @default.
• W4328136384 hasAuthorship W4328136384A5058293565 @default.
• W4328136384 hasAuthorship W4328136384A5066003664 @default.
• W4328136384 hasAuthorship W4328136384A5081938522 @default.
• W4328136384 hasAuthorship W4328136384A5084265731 @default.
• W4328136384 hasBestOaLocation W43281363841 @default.
• W4328136384 hasConcept C110738630 @default.
• W4328136384 hasConcept C113196181 @default.
• W4328136384 hasConcept C120665830 @default.
• W4328136384 hasConcept C121332964 @default.
• W4328136384 hasConcept C128765274 @default.
• W4328136384 hasConcept C146088050 @default.
• W4328136384 hasConcept C153294291 @default.
• W4328136384 hasConcept C171250308 @default.
• W4328136384 hasConcept C175665537 @default.
• W4328136384 hasConcept C178790620 @default.
• W4328136384 hasConcept C185592680 @default.
• W4328136384 hasConcept C192562407 @default.
• W4328136384 hasConcept C207114421 @default.
• W4328136384 hasConcept C2779227376 @default.
• W4328136384 hasConcept C3045981 @default.
• W4328136384 hasConcept C39353612 @default.
• W4328136384 hasConcept C43617362 @default.
• W4328136384 hasConcept C44280652 @default.
• W4328136384 hasConcept C77557913 @default.
• W4328136384 hasConcept C8010536 @default.
• W4328136384 hasConceptScore W4328136384C110738630 @default.
• W4328136384 hasConceptScore W4328136384C113196181 @default.
• W4328136384 hasConceptScore W4328136384C120665830 @default.
• W4328136384 hasConceptScore W4328136384C121332964 @default.
• W4328136384 hasConceptScore W4328136384C128765274 @default.
• W4328136384 hasConceptScore W4328136384C146088050 @default.
• W4328136384 hasConceptScore W4328136384C153294291 @default.
• W4328136384 hasConceptScore W4328136384C171250308 @default.
• W4328136384 hasConceptScore W4328136384C175665537 @default.
• W4328136384 hasConceptScore W4328136384C178790620 @default.
• W4328136384 hasConceptScore W4328136384C185592680 @default.
• W4328136384 hasConceptScore W4328136384C192562407 @default.
• W4328136384 hasConceptScore W4328136384C207114421 @default.
• W4328136384 hasConceptScore W4328136384C2779227376 @default.
• W4328136384 hasConceptScore W4328136384C3045981 @default.
• W4328136384 hasConceptScore W4328136384C39353612 @default.
• W4328136384 hasConceptScore W4328136384C43617362 @default.
• W4328136384 hasConceptScore W4328136384C44280652 @default.

• next