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• W4352976909 abstract "In silicon carbide (SiC) planar insulated-gate bipolar transistor (IGBT), a large distance between neighboring p-bodies is beneficial to enhance the on-state conductivity modulation, but will expose the gate oxide to high electric field in off-state. With p-bodies placed closer, the gate oxide field is reduced, but the conductivity modulation is suppressed. In this work, a new SiC planar IGBT with oxide shield is proposed and studied by TCAD simulations. The proposed SiC IGBT achieves improved trade-off between on-state voltage drop (VON) and maximum gate oxide electric field (Eox-m). When a quite larger distance between neighboring p-bodies is adopted in the proposed SiC IGBT, a low VON is obtained, while the Eox-m can be kept at a small value with the oxide shielding structures protecting the gate oxide. Switching characteristics are also studied, and the proposed SiC-IGBT delivers much better trade-off between turn-off energy loss (EOFF) and VON than the conventional SiC planar IGBT." @default.
• W4352976909 created "2023-03-23" @default.
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• W4352976909 date "2023-01-01" @default.
• W4352976909 modified "2023-10-01" @default.
• W4352976909 title "Cell Design Consideration in SiC Planar IGBT and Proposal of New SiC IGBT With Improved Performance Trade-Off" @default.
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• W4352976909 doi "https://doi.org/10.1109/jeds.2023.3259639" @default.
• W4352976909 hasPublicationYear "2023" @default.
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