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- W4360602154 abstract "In this work, two dimensional QBi (Q=Si, Ge and Sn) monolayers with P6m2 space group are investigated by using first principle calculations based on the density functional theory. As the first step, the stability of the proposed monolayer materials was examined. Based on our calculations, QBi (Q=Si, Ge and Sn) monolayer structures have proper structural and dynamic stabilities, so they are promising substances to fabricate experimentally. Investigate of electronic structures which confirmed by cohesive energy calculation and phonon dispersion simulation respectively. Evaluating the electronic properties of these materials shows that they are semiconductors with small direct band gaps which can be effectively adjusted by applying compressive and tensile strains. Moreover, based on our optical properties evaluation these monolayer materials show strain tunable optical characteristics in visible region of light. The results of this research reveal that QBi (Q=Si, Ge and Sn) monolayers are promising materials for using in different electro-optical devices especially electromechanical and optical sensors." @default.
- W4360602154 created "2023-03-24" @default.
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- W4360602154 date "2023-06-01" @default.
- W4360602154 modified "2023-10-01" @default.
- W4360602154 title "Visible light response in 2D QBi (Q=Si, Ge and Sn) monolayer semiconductors: A DFT based study" @default.
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- W4360602154 doi "https://doi.org/10.1016/j.mtcomm.2023.105886" @default.
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