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- W4360770821 abstract "Double-gate ferroelectric thin-film transistor (DG-FeTFT) with an amorphous indium–gallium–zinc oxide (α-IGZO) channel is demonstrated. DG-FeTFT is composed of all-sputter-deposited thin films and the bottom FeTFT (FeTFT <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>bottom</sub> ) and top conventional TFT (TFT <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>top</sub> ) are combined into a single device that shares the α-IGZO channel and source/drain. Through the separation of read (by TFT <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>top</sub> ) and program/erase (by FeTFT <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>bottom</sub> ) operations, it is confirmed that wide memory window (MW) of ~5V is obtained with an MW amplification and read disturbance can be significantly improved. Furthermore, it is verified that faster program/erase speeds are achievable by modulating the gate voltage of TFT <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>top</sub> , leading to the improved endurance characteristics." @default.
- W4360770821 created "2023-03-25" @default.
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- W4360770821 date "2023-05-01" @default.
- W4360770821 modified "2023-10-01" @default.
- W4360770821 title "All-Sputter-Deposited Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Double-Gate Ferroelectric Thin-Film Transistor With Amorphous Indium–Gallium–Zinc Oxide Channel" @default.
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- W4360770821 doi "https://doi.org/10.1109/led.2023.3260860" @default.
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