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• W4360943685 abstract "Al1-xSix films were obtained by ion beam sputtering of an Al-Si composite target. Studies of the structure and electronic structure of Al1-xSix films were carried out. The structure and electronic structure of the films were investigated. The formation of an ordered phase of Al3Si was detected using X-ray diffraction and X-ray emission spectroscopy, as well as theoretical calculation of the band structure and Si L2.3-, Al L2.3-spectra. It is established that the Al3Si phase has a Cu3Au (Pm3m) type structure with a lattice parameter a=4.085 Å, the primitive sublattices of which are filled with atoms of two types Al and Si. It was found that the long-range order in Al1-xSix ion-beam films is sufficiently resistant to changes in the elemental composition from Al0.75Si0.25 to Al0.55Si0.45." @default.
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• W4360943685 date "2023-05-01" @default.
• W4360943685 modified "2023-10-16" @default.
• W4360943685 title "Formation of the Al3Si metastable phase in Al-Si films obtained by ion-beam sputtering according to experimental and theoretical data" @default.
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• W4360943685 doi "https://doi.org/10.1016/j.tsf.2023.139816" @default.
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