Matches in SemOpenAlex for { <https://semopenalex.org/work/W4361018889> ?p ?o ?g. }
- W4361018889 abstract "Abstract Defect engineering is foundational to classical electronic device development and for emerging quantum devices. Here, we report on defect engineering of silicon with ion pulses from a laser accelerator in the laser intensity range of 10 19 W cm −2 and ion flux levels of up to 10 22 ions cm −2 s −1 , about five orders of magnitude higher than conventional ion implanters. Low energy ions from plasma expansion of the laser-foil target are implanted near the surface and then diffuse into silicon samples locally pre-heated by high energy ions from the same laser-ion pulse. Silicon crystals exfoliate in the areas of highest energy deposition. Color centers, predominantly W and G-centers, form directly in response to ion pulses without a subsequent annealing step. We find that the linewidth of G-centers increases with high ion flux faster than the linewidth of W-centers, consistent with density functional theory calculations of their electronic structure. Intense ion pulses from a laser-accelerator drive materials far from equilibrium and enable direct local defect engineering and high flux doping of semiconductors." @default.
- W4361018889 created "2023-03-30" @default.
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- W4361018889 date "2023-03-27" @default.
- W4361018889 modified "2023-10-10" @default.
- W4361018889 title "Defect engineering of silicon with ion pulses from laser acceleration" @default.
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- W4361018889 doi "https://doi.org/10.1038/s43246-023-00349-4" @default.
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