Matches in SemOpenAlex for { <https://semopenalex.org/work/W4363677333> ?p ?o ?g. }
- W4363677333 endingPage "139842" @default.
- W4363677333 startingPage "139842" @default.
- W4363677333 abstract "Resistive random-access memory has great application prospects in developing nonvolatile memory and artificial synapse devices. In this work, lanthanum (La) doped hafnium dioxide (HfO2) (La: HfO2) thin film is fabricated by sol-gel deposition. Using gold (Au) and lanthanum nickelate (LaNiO3) as electrodes, the resistive switching performance and synaptic behavior of memristor based on La: HfO2 thin films with different doping concentrations as resistive switching layers are investigated. Current-voltage characteristics show that La-doped devices all exhibit bipolar resistive switching performance. When La doping concentration is 10%, the device shows reliable switching ratio (∼103) under 110 consecutive cycles. And the conduction mechanism of the device in high resistance state and low resistance state is analyzed by ohmic conduction and space charge limited conduction. In addition, the analog resistive switching can be obtained by increasing the voltage scanning and the result reveals that the device can be used to mimic the potentiation and depression behavior of biological synapses. Au/10% La: HfO2/LaNiO3/Si memristor effectively simulates the synaptic properties, such as long-term potentiation/depression, short-term potentiation/depression, paired-pulse facilitation and spike-time-dependent-plasticity learning rule. Furthermore, the information is classified and processed in an 8×8 pixel array. These findings will open up a unique way for the future development of nonvolatile memory and neural morphology computation." @default.
- W4363677333 created "2023-04-11" @default.
- W4363677333 creator A5025866033 @default.
- W4363677333 creator A5057420506 @default.
- W4363677333 creator A5070522427 @default.
- W4363677333 creator A5075229007 @default.
- W4363677333 creator A5085506535 @default.
- W4363677333 creator A5091875193 @default.
- W4363677333 date "2023-06-01" @default.
- W4363677333 modified "2023-10-16" @default.
- W4363677333 title "Resistive switching performance and synaptic behavior of La-doped HfO2 thin film" @default.
- W4363677333 cites W1574755855 @default.
- W4363677333 cites W1966091428 @default.
- W4363677333 cites W2591029953 @default.
- W4363677333 cites W2728455351 @default.
- W4363677333 cites W2781121986 @default.
- W4363677333 cites W2793181810 @default.
- W4363677333 cites W2910318687 @default.
- W4363677333 cites W2922529784 @default.
- W4363677333 cites W2953746659 @default.
- W4363677333 cites W2973952117 @default.
- W4363677333 cites W2980956863 @default.
- W4363677333 cites W2999869743 @default.
- W4363677333 cites W3023828896 @default.
- W4363677333 cites W3035964902 @default.
- W4363677333 cites W3038537572 @default.
- W4363677333 cites W3048736184 @default.
- W4363677333 cites W3080188993 @default.
- W4363677333 cites W3090001109 @default.
- W4363677333 cites W3093747632 @default.
- W4363677333 cites W3099593238 @default.
- W4363677333 cites W3108036060 @default.
- W4363677333 cites W3116204495 @default.
- W4363677333 cites W3122984962 @default.
- W4363677333 cites W3125550422 @default.
- W4363677333 cites W3128381916 @default.
- W4363677333 cites W3138706377 @default.
- W4363677333 cites W3168324241 @default.
- W4363677333 cites W3172918678 @default.
- W4363677333 cites W3202216191 @default.
- W4363677333 cites W3205339330 @default.
- W4363677333 cites W3215513020 @default.
- W4363677333 cites W4200156881 @default.
- W4363677333 cites W4206494906 @default.
- W4363677333 cites W4206692268 @default.
- W4363677333 cites W4213415966 @default.
- W4363677333 cites W4214504506 @default.
- W4363677333 cites W4225550226 @default.
- W4363677333 cites W4281395324 @default.
- W4363677333 cites W4281480455 @default.
- W4363677333 cites W4283025338 @default.
- W4363677333 cites W4295135931 @default.
- W4363677333 doi "https://doi.org/10.1016/j.tsf.2023.139842" @default.
- W4363677333 hasPublicationYear "2023" @default.
- W4363677333 type Work @default.
- W4363677333 citedByCount "0" @default.
- W4363677333 crossrefType "journal-article" @default.
- W4363677333 hasAuthorship W4363677333A5025866033 @default.
- W4363677333 hasAuthorship W4363677333A5057420506 @default.
- W4363677333 hasAuthorship W4363677333A5070522427 @default.
- W4363677333 hasAuthorship W4363677333A5075229007 @default.
- W4363677333 hasAuthorship W4363677333A5085506535 @default.
- W4363677333 hasAuthorship W4363677333A5091875193 @default.
- W4363677333 hasConcept C119599485 @default.
- W4363677333 hasConcept C119857082 @default.
- W4363677333 hasConcept C127413603 @default.
- W4363677333 hasConcept C138230450 @default.
- W4363677333 hasConcept C150072547 @default.
- W4363677333 hasConcept C151927369 @default.
- W4363677333 hasConcept C159985019 @default.
- W4363677333 hasConcept C165801399 @default.
- W4363677333 hasConcept C170493617 @default.
- W4363677333 hasConcept C171250308 @default.
- W4363677333 hasConcept C172100665 @default.
- W4363677333 hasConcept C177950962 @default.
- W4363677333 hasConcept C182019814 @default.
- W4363677333 hasConcept C185592680 @default.
- W4363677333 hasConcept C19067145 @default.
- W4363677333 hasConcept C192562407 @default.
- W4363677333 hasConcept C25274449 @default.
- W4363677333 hasConcept C2779227376 @default.
- W4363677333 hasConcept C29561615 @default.
- W4363677333 hasConcept C41008148 @default.
- W4363677333 hasConcept C49040817 @default.
- W4363677333 hasConcept C50644808 @default.
- W4363677333 hasConcept C55493867 @default.
- W4363677333 hasConcept C57863236 @default.
- W4363677333 hasConceptScore W4363677333C119599485 @default.
- W4363677333 hasConceptScore W4363677333C119857082 @default.
- W4363677333 hasConceptScore W4363677333C127413603 @default.
- W4363677333 hasConceptScore W4363677333C138230450 @default.
- W4363677333 hasConceptScore W4363677333C150072547 @default.
- W4363677333 hasConceptScore W4363677333C151927369 @default.
- W4363677333 hasConceptScore W4363677333C159985019 @default.
- W4363677333 hasConceptScore W4363677333C165801399 @default.
- W4363677333 hasConceptScore W4363677333C170493617 @default.
- W4363677333 hasConceptScore W4363677333C171250308 @default.
- W4363677333 hasConceptScore W4363677333C172100665 @default.