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- W4364355596 abstract "In this study, we have investigated the effect of dual doping on the thermoelectric performance of zinc oxide (ZnO). Pure ZnO is a wide band-gap semiconductor with a very low carrier concentration in its intrinsic form. Doping ZnO by trivalent impurity ions is considered a viable approach to improve its electrical conductivity by enhancing the concentration of charge carriers in the material. However, the above enhancement in the carrier concentration can also increase the electronic component of the system's thermal conductivity, thereby limiting its thermoelectric performance. It is expected that the dual doping of ZnO can decrease its thermal conductivity without adversely affecting its electrical conductivity. To test the above hypothesis, we doped ZnO with four different pairs of dopants (In/B, In/Al, In/Ga, and In/Bi) and compared the thermoelectric performance of the resulting materials over the temperature range of 350 K–773 K. For the above comparison, Seebeck coefficient, electrical conductivity, and thermal conductivity of the samples were measured, and corresponding power factors (PF) and figure of merits (ZT) were determined. Among all the samples investigated in the study, the In/Bi-doped ZnO exhibited the highest ZT value of 0.37 at 773 K." @default.
- W4364355596 created "2023-04-12" @default.
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- W4364355596 date "2023-07-01" @default.
- W4364355596 modified "2023-09-29" @default.
- W4364355596 title "Role of dual doping in zinc oxide for optimizing thermoelectric performance" @default.
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- W4364355596 doi "https://doi.org/10.1016/j.ceramint.2023.04.080" @default.
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