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• W4364359359 abstract "Organic field-effect transistors (OFETs) with polymer charge-trapping dielectric, which exhibit many advantages over Si-based memory devices such as low cost, light weight, and flexibility, still suffer challenges in practical application due to the unsatisfied endurance characteristics and even the lack of fundamental of behind mechanism. Here, we revealed that the degradation of endurance characteristics of pentacene OFET with poly(2-vinyl naphthalene) (PVN) as charge-storage layer is dominated by the deep hole-traps in PVN by using the photo-stimulated charge de-trapping technique with the fiber-coupled monochromatic-light probes. The depth distribution of hole-traps in PVN film of pentacene OFET is also provided." @default.
• W4364359359 created "2023-04-12" @default.
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• W4364359359 date "2023-04-11" @default.
• W4364359359 modified "2023-10-14" @default.
• W4364359359 title "Deep-trap dominated degradation of the endurance characteristics in OFET memory with polymer charge-trapping layer" @default.
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• W4364359359 doi "https://doi.org/10.1038/s41598-023-32959-w" @default.
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