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• W4366490753 abstract "Temperature sensors are the integrated part of electronics used in most of the applications. Present work demonstrates the temperature sensor based on ultra-wide bandgap semiconducting material, i.e.,Ga2O3. The material is known for its wider bandgap and radiation hardness properties. Ni/Ga2O3 based Schottky barrier device is simulated for sensing the temperature in the current range of 100 µA to 0.1 µA and in temperature range from 200 K to 600 K using SILVACO Atlas software. Relevant models such as bandgap narrowing, Schokely-Read-Hall, etc. were employed to ensure accuracy in the results. The simulated current–voltage (I-V) plots showed exponential variation and followed ideal thermionic emission model. The I-V plots were used to find the thermal sensitivity of device under considerations, which showed linearity in the measured current range. The maximum sensitivity is estimated as 3.22 mV/K at measuring current level of 0.1 µA." @default.
• W4366490753 created "2023-04-22" @default.
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• W4366490753 date "2023-04-01" @default.
• W4366490753 modified "2023-10-16" @default.
• W4366490753 title "Ni/Ga2O3 based Schottky diode temperature sensor" @default.
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• W4366490753 doi "https://doi.org/10.1016/j.matpr.2023.04.180" @default.
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