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• W4366815922 endingPage "305104" @default.
• W4366815922 startingPage "305104" @default.
• W4366815922 abstract "Abstract While radiation is known to degrade AlGaN/GaN high-electron-mobility transistors (HEMTs), the question remains on the extent of damage governed by the presence of an electrical field in the device. In this study, we induced displacement damage in HEMTs in both ON and OFF states by irradiating with 2.8 MeV Au 4+ ion to fluence levels ranging from <?CDATA $1.72times 10^{10}$?> <mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML overflow=scroll> <mml:mn>1.72</mml:mn> <mml:mo>×</mml:mo> <mml:msup> <mml:mn>10</mml:mn> <mml:mrow> <mml:mn>10</mml:mn> </mml:mrow> </mml:msup> </mml:math> to <?CDATA $3.745times 10^{13}$?> <mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML overflow=scroll> <mml:mn>3.745</mml:mn> <mml:mo>×</mml:mo> <mml:msup> <mml:mn>10</mml:mn> <mml:mrow> <mml:mn>13</mml:mn> </mml:mrow> </mml:msup> </mml:math> ions cm −2 , or 0.001–2 displacement per atom (dpa). Electrical measurement is done in situ , and high-resolution transmission electron microscopy (HRTEM), energy dispersive x-ray (EDX), geometrical phase analysis (GPA), and micro-Raman are performed on the highest fluence of Au 4+ irradiated devices. The selected heavy ion irradiation causes cascade damage in the passivation, AlGaN, and GaN layers and at all associated interfaces. After just 0.1 dpa, the current density in the ON-mode device deteriorates by two orders of magnitude, whereas the OFF-mode device totally ceases to operate. Moreover, six orders of magnitude increase in leakage current and loss of gate control over the 2-dimensional electron gas channel are observed. GPA and Raman analysis reveal strain relaxation after a 2 dpa damage level in devices. Significant defects and intermixing of atoms near AlGaN/GaN interfaces and GaN layer are found from HRTEM and EDX analyses, which can substantially alter device characteristics and result in complete failure." @default.
• W4366815922 created "2023-04-25" @default.
• W4366815922 creator A5004631982 @default.
• W4366815922 creator A5007369487 @default.
• W4366815922 creator A5025731401 @default.
• W4366815922 creator A5038061213 @default.
• W4366815922 creator A5051741251 @default.
• W4366815922 creator A5052487101 @default.
• W4366815922 creator A5075256687 @default.
• W4366815922 creator A5085381025 @default.
• W4366815922 creator A5085483761 @default.
• W4366815922 date "2023-05-09" @default.
• W4366815922 modified "2023-10-14" @default.
• W4366815922 title "Heavy ion irradiation induced failure of gallium nitride high electron mobility transistors: effects of in-situ biasing" @default.
• W4366815922 cites W1922924821 @default.
• W4366815922 cites W1965745149 @default.
• W4366815922 cites W1981165268 @default.
• W4366815922 cites W1982381330 @default.
• W4366815922 cites W1998437016 @default.
• W4366815922 cites W2003737410 @default.
• W4366815922 cites W2010107699 @default.
• W4366815922 cites W2015189864 @default.
• W4366815922 cites W2017367659 @default.
• W4366815922 cites W2020037569 @default.
• W4366815922 cites W2027260909 @default.
• W4366815922 cites W2055567198 @default.
• W4366815922 cites W2059125539 @default.
• W4366815922 cites W2069591696 @default.
• W4366815922 cites W2073354463 @default.
• W4366815922 cites W2080549754 @default.
• W4366815922 cites W2112712120 @default.
• W4366815922 cites W2136033905 @default.
• W4366815922 cites W2141966815 @default.
• W4366815922 cites W2142942268 @default.
• W4366815922 cites W2150237098 @default.
• W4366815922 cites W2155143395 @default.
• W4366815922 cites W2156938711 @default.
• W4366815922 cites W2166850656 @default.
• W4366815922 cites W2229492299 @default.
• W4366815922 cites W2259768559 @default.
• W4366815922 cites W2553523012 @default.
• W4366815922 cites W2616447492 @default.
• W4366815922 cites W2740747508 @default.
• W4366815922 cites W2808523573 @default.
• W4366815922 cites W2904128453 @default.
• W4366815922 cites W2969334475 @default.
• W4366815922 cites W2971053863 @default.
• W4366815922 cites W3038357049 @default.
• W4366815922 cites W3093131798 @default.
• W4366815922 cites W3096365295 @default.
• W4366815922 cites W3137765388 @default.
• W4366815922 cites W3159646374 @default.
• W4366815922 cites W4205396729 @default.
• W4366815922 cites W4210462017 @default.
• W4366815922 cites W4221023448 @default.
• W4366815922 cites W4226456959 @default.
• W4366815922 cites W4283274259 @default.
• W4366815922 cites W4309289817 @default.
• W4366815922 doi "https://doi.org/10.1088/1361-6463/accfa7" @default.
• W4366815922 hasPublicationYear "2023" @default.
• W4366815922 type Work @default.
• W4366815922 citedByCount "0" @default.
• W4366815922 crossrefType "journal-article" @default.
• W4366815922 hasAuthorship W4366815922A5004631982 @default.
• W4366815922 hasAuthorship W4366815922A5007369487 @default.
• W4366815922 hasAuthorship W4366815922A5025731401 @default.
• W4366815922 hasAuthorship W4366815922A5038061213 @default.
• W4366815922 hasAuthorship W4366815922A5051741251 @default.
• W4366815922 hasAuthorship W4366815922A5052487101 @default.
• W4366815922 hasAuthorship W4366815922A5075256687 @default.
• W4366815922 hasAuthorship W4366815922A5085381025 @default.
• W4366815922 hasAuthorship W4366815922A5085483761 @default.
• W4366815922 hasBestOaLocation W43668159221 @default.
• W4366815922 hasConcept C113196181 @default.
• W4366815922 hasConcept C145148216 @default.
• W4366815922 hasConcept C146088050 @default.
• W4366815922 hasConcept C159122135 @default.
• W4366815922 hasConcept C159985019 @default.
• W4366815922 hasConcept C161368742 @default.
• W4366815922 hasConcept C171250308 @default.
• W4366815922 hasConcept C178790620 @default.
• W4366815922 hasConcept C185592680 @default.
• W4366815922 hasConcept C192562407 @default.
• W4366815922 hasConcept C22078206 @default.
• W4366815922 hasConcept C2778871202 @default.
• W4366815922 hasConcept C2779227376 @default.
• W4366815922 hasConcept C43617362 @default.
• W4366815922 hasConceptScore W4366815922C113196181 @default.
• W4366815922 hasConceptScore W4366815922C145148216 @default.
• W4366815922 hasConceptScore W4366815922C146088050 @default.
• W4366815922 hasConceptScore W4366815922C159122135 @default.
• W4366815922 hasConceptScore W4366815922C159985019 @default.
• W4366815922 hasConceptScore W4366815922C161368742 @default.
• W4366815922 hasConceptScore W4366815922C171250308 @default.
• W4366815922 hasConceptScore W4366815922C178790620 @default.
• W4366815922 hasConceptScore W4366815922C185592680 @default.
• W4366815922 hasConceptScore W4366815922C192562407 @default.
• W4366815922 hasConceptScore W4366815922C22078206 @default.

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