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• W4366985154 abstract "Abstract Transition metal dichalcogenide (TMD) layered semiconductors possess immense potential in the design of photonic, electronic, optoelectronic, and sensor devices. However, the sub-bandgap light absorption of TMD in the range from near-infrared (NIR) to short-wavelength infrared (SWIR) is insufficient for applications beyond the bandgap limit. Herein, we report that the sub-bandgap photoresponse of MoS 2 /Au heterostructures can be robustly modulated by the electrode fabrication method employed. We observed up to 60% sub-bandgap absorption in the MoS 2 /Au heterostructure, which includes the hybridized interface, where the Au layer was applied via sputter deposition. The greatly enhanced absorption of sub-bandgap light is due to the planar cavity formed by MoS 2 and Au; as such, the absorption spectrum can be tuned by altering the thickness of the MoS 2 layer. Photocurrent in the SWIR wavelength range increases due to increased absorption, which means that broad wavelength detection from visible toward SWIR is possible. We also achieved rapid photoresponse (~ 150 µs) and high responsivity (17 mA W − 1 ) at an excitation wavelength of 1,550 nm. Our findings demonstrate a facile method for optical property modulation using metal electrode engineering and for realizing SWIR photodetection in wide-bandgap 2D materials." @default.
• W4366985154 created "2023-04-27" @default.
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• W4366985154 date "2023-04-25" @default.
• W4366985154 modified "2023-09-29" @default.
• W4366985154 title "Engineering electrode interfaces for telecom-band photodetection in MoS2/Au heterostructures via sub-band light absorption" @default.
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• W4366985154 doi "https://doi.org/10.21203/rs.3.rs-2774956/v1" @default.
• W4366985154 hasPublicationYear "2023" @default.
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