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- W4367000477 abstract "The integration of two-dimensional $MoS_{2}$ with $GaN$ recently attracted significant interest for future electronic/optoelectronic applications. However, the reported studies have been mainly carried out using heteroepitaxial $GaN$ templates on sapphire substrates, whereas the growth of $MoS_{2}$ on low-dislocation-density bulk GaN can be strategic for the realization of truly vertical devices. In this paper, we report the growth of ultrathin $MoS_{2}$ films, mostly composed by single-layers ($1L$), onto homoepitaxial $n-GaN$ on $n^{+}$ bulk substrates by sulfurization of a pre-deposited $MoO_{x}$ film. Highly uniform and conformal coverage of the $GaN$ surface was demonstrated by atomic force microscopy, while very low tensile strain (0.05%) and a significant $p^{+}$-type doping ($4.5 times 10^{12} cm^{-2}$) of $1L-MoS_{2}$ was evaluated by Raman mapping. Atomic resolution structural and compositional analyses by aberration-corrected electron microscopy revealed a nearly-ideal van der Waals interface between $MoS_{2}$ and the $Ga$-terminated $GaN$ crystal, where only the topmost $Ga$ atoms are affected by oxidation. Furthermore, the relevant lattice parameters of the $MoS_{2}/GaN$ heterojunction, such as the van der Waals gap, were measured with high precision. Finally, the vertical current injection across this 2D/3D heterojunction has been investigated by nanoscale current-voltage analyses performed by conductive atomic force microscopy, showing a rectifying behavior with an average turn-on voltage $V_{on}=1.7 V$ under forward bias, consistent with the expected band alignment at the interface between $p^{+}$ doped $1L-MoS_{2}$ and $n-GaN$." @default.
- W4367000477 created "2023-04-27" @default.
- W4367000477 creator A5009119987 @default.
- W4367000477 creator A5012982663 @default.
- W4367000477 creator A5022304517 @default.
- W4367000477 creator A5023521680 @default.
- W4367000477 creator A5036508222 @default.
- W4367000477 creator A5053054341 @default.
- W4367000477 creator A5054272982 @default.
- W4367000477 creator A5059628492 @default.
- W4367000477 creator A5062507859 @default.
- W4367000477 creator A5063504994 @default.
- W4367000477 creator A5066851510 @default.
- W4367000477 creator A5067979775 @default.
- W4367000477 creator A5084117108 @default.
- W4367000477 creator A5087902197 @default.
- W4367000477 date "2023-04-24" @default.
- W4367000477 modified "2023-09-27" @default.
- W4367000477 title "Atomic resolution interface structure and vertical current injection in highly uniform $MoS_{2}$ heterojunctions with bulk GaN" @default.
- W4367000477 doi "https://doi.org/10.48550/arxiv.2304.12213" @default.
- W4367000477 hasPublicationYear "2023" @default.
- W4367000477 type Work @default.
- W4367000477 citedByCount "0" @default.
- W4367000477 crossrefType "posted-content" @default.
- W4367000477 hasAuthorship W4367000477A5009119987 @default.
- W4367000477 hasAuthorship W4367000477A5012982663 @default.
- W4367000477 hasAuthorship W4367000477A5022304517 @default.
- W4367000477 hasAuthorship W4367000477A5023521680 @default.
- W4367000477 hasAuthorship W4367000477A5036508222 @default.
- W4367000477 hasAuthorship W4367000477A5053054341 @default.
- W4367000477 hasAuthorship W4367000477A5054272982 @default.
- W4367000477 hasAuthorship W4367000477A5059628492 @default.
- W4367000477 hasAuthorship W4367000477A5062507859 @default.
- W4367000477 hasAuthorship W4367000477A5063504994 @default.
- W4367000477 hasAuthorship W4367000477A5066851510 @default.
- W4367000477 hasAuthorship W4367000477A5067979775 @default.
- W4367000477 hasAuthorship W4367000477A5084117108 @default.
- W4367000477 hasAuthorship W4367000477A5087902197 @default.
- W4367000477 hasConcept C102951782 @default.
- W4367000477 hasConcept C121332964 @default.
- W4367000477 hasConcept C126061179 @default.
- W4367000477 hasConcept C171250308 @default.
- W4367000477 hasConcept C178790620 @default.
- W4367000477 hasConcept C185592680 @default.
- W4367000477 hasConcept C192562407 @default.
- W4367000477 hasConcept C206008964 @default.
- W4367000477 hasConcept C26873012 @default.
- W4367000477 hasConcept C32909587 @default.
- W4367000477 hasConcept C49040817 @default.
- W4367000477 hasConcept C57863236 @default.
- W4367000477 hasConcept C79794668 @default.
- W4367000477 hasConceptScore W4367000477C102951782 @default.
- W4367000477 hasConceptScore W4367000477C121332964 @default.
- W4367000477 hasConceptScore W4367000477C126061179 @default.
- W4367000477 hasConceptScore W4367000477C171250308 @default.
- W4367000477 hasConceptScore W4367000477C178790620 @default.
- W4367000477 hasConceptScore W4367000477C185592680 @default.
- W4367000477 hasConceptScore W4367000477C192562407 @default.
- W4367000477 hasConceptScore W4367000477C206008964 @default.
- W4367000477 hasConceptScore W4367000477C26873012 @default.
- W4367000477 hasConceptScore W4367000477C32909587 @default.
- W4367000477 hasConceptScore W4367000477C49040817 @default.
- W4367000477 hasConceptScore W4367000477C57863236 @default.
- W4367000477 hasConceptScore W4367000477C79794668 @default.
- W4367000477 hasLocation W43670004771 @default.
- W4367000477 hasOpenAccess W4367000477 @default.
- W4367000477 hasPrimaryLocation W43670004771 @default.
- W4367000477 hasRelatedWork W1965325660 @default.
- W4367000477 hasRelatedWork W1980288277 @default.
- W4367000477 hasRelatedWork W2042524877 @default.
- W4367000477 hasRelatedWork W2058676402 @default.
- W4367000477 hasRelatedWork W2794423539 @default.
- W4367000477 hasRelatedWork W3037605932 @default.
- W4367000477 hasRelatedWork W3157914560 @default.
- W4367000477 hasRelatedWork W4214760141 @default.
- W4367000477 hasRelatedWork W4226476672 @default.
- W4367000477 hasRelatedWork W4362554894 @default.
- W4367000477 isParatext "false" @default.
- W4367000477 isRetracted "false" @default.
- W4367000477 workType "article" @default.