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- W4367016598 abstract "Effects of programming/erasing (P/E) and total-ionizing dose (TID) are investigated on 2- and 40-fin charge-trap transistors (CTTs) fabricated in a 14-nm bulk-Si CMOS technology. Significant random telegraph noise (RTN) is observed in as-processed CTTs, especially for 2-fin devices. Trapped charge in programed devices does not significantly affect 1/ <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>${f}$ </tex-math></inline-formula> noise magnitudes, but P/E leads to trap activation/deactivation, causing changes in border-trap energy and spatial distributions. TID irradiation activates a large number of stable radiation-induced traps." @default.
- W4367016598 created "2023-04-27" @default.
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- W4367016598 date "2023-06-01" @default.
- W4367016598 modified "2023-10-01" @default.
- W4367016598 title "Low-Frequency and Random Telegraph Noise in 14-nm Bulk Si Charge-Trap Transistors" @default.
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- W4367016598 doi "https://doi.org/10.1109/ted.2023.3265939" @default.
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