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• W4367041802 abstract "Abstract The characteristics of an AlGaN/GaN high-electron-mobility transistor buffer structure are studied and optimized by employing an AlN/GaN superlattice (SL) structure. Through vertical leakage analysis and back-gate measurement, combined with Silvaco-TCAD simulation, the influence of buffer trapson the carrier transport behaviors and electrical performance for SL buffer structures under a high electric field is analyzed. The AlN/GaN SL buffer structures are further optimized with various AlN/GaN thickness ratios and their total thickness through both simulation and experimental studies. As a result, a high breakdown voltage of up to 1.3 kV with a maximum breakdown electric field of 2.8 MV cm −1 has been achieved. Moreover, the buffer trapping effect is dramatically suppressed, leading to a minimum drop of channel current for the optimized sample, in which donor traps are found to play a positive role in the device dynamic characteristics." @default.
• W4367041802 created "2023-04-27" @default.
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• W4367041802 date "2023-05-25" @default.
• W4367041802 modified "2023-10-01" @default.
• W4367041802 title "Enhanced breakdown voltage and dynamic performance of GaN HEMTs with AlN/GaN superlattice buffer" @default.
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• W4367041802 doi "https://doi.org/10.1088/1361-6463/acd069" @default.
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