Matches in SemOpenAlex for { <https://semopenalex.org/work/W4367051844> ?p ?o ?g. }
Showing items 1 to 87 of
87
with 100 items per page.
- W4367051844 endingPage "940" @default.
- W4367051844 startingPage "940" @default.
- W4367051844 abstract "The channel temperature distribution and breakdown points are difficult to monitor for the traditional p-GaN gate HEMTs under high power stress, because the metal gate blocks the light. To solve this problem, we processed p-GaN gate HEMTs with transparent indium tin oxide (ITO) as the gate terminal and successfully captured the information mentioned above, utilizing ultraviolet reflectivity thermal imaging equipment. The fabricated ITO-gated HEMTs exhibited a saturation drain current of 276 mA/mm and an on-resistance of 16.6 Ω·mm. During the test, the heat was found to concentrate in the vicinity of the gate field in the access area, under the stress of VGS = 6 V and VDS = 10/20/30 V. After 691 s high power stress, the device failed, and a hot spot appeared on the p-GaN. After failure, luminescence was observed on the sidewall of the p-GaN while positively biasing the gate, revealing the side wall is the weakest spot under high power stress. The findings of this study provide a powerful tool for reliability analysis and also point to a way for improving the reliability of the p-GaN gate HEMTs in the future." @default.
- W4367051844 created "2023-04-27" @default.
- W4367051844 creator A5018932156 @default.
- W4367051844 creator A5022357217 @default.
- W4367051844 creator A5025462318 @default.
- W4367051844 creator A5032704929 @default.
- W4367051844 creator A5032874127 @default.
- W4367051844 creator A5034084187 @default.
- W4367051844 creator A5036726873 @default.
- W4367051844 creator A5061390923 @default.
- W4367051844 creator A5063054715 @default.
- W4367051844 creator A5065442308 @default.
- W4367051844 creator A5086040292 @default.
- W4367051844 date "2023-04-26" @default.
- W4367051844 modified "2023-09-26" @default.
- W4367051844 title "Investigating the Failure Mechanism of p-GaN Gate HEMTs under High Power Stress with a Transparent ITO Gate" @default.
- W4367051844 doi "https://doi.org/10.3390/mi14050940" @default.
- W4367051844 hasPubMedId "https://pubmed.ncbi.nlm.nih.gov/37241564" @default.
- W4367051844 hasPublicationYear "2023" @default.
- W4367051844 type Work @default.
- W4367051844 citedByCount "0" @default.
- W4367051844 crossrefType "journal-article" @default.
- W4367051844 hasAuthorship W4367051844A5018932156 @default.
- W4367051844 hasAuthorship W4367051844A5022357217 @default.
- W4367051844 hasAuthorship W4367051844A5025462318 @default.
- W4367051844 hasAuthorship W4367051844A5032704929 @default.
- W4367051844 hasAuthorship W4367051844A5032874127 @default.
- W4367051844 hasAuthorship W4367051844A5034084187 @default.
- W4367051844 hasAuthorship W4367051844A5036726873 @default.
- W4367051844 hasAuthorship W4367051844A5061390923 @default.
- W4367051844 hasAuthorship W4367051844A5063054715 @default.
- W4367051844 hasAuthorship W4367051844A5065442308 @default.
- W4367051844 hasAuthorship W4367051844A5086040292 @default.
- W4367051844 hasBestOaLocation W43670518441 @default.
- W4367051844 hasConcept C119599485 @default.
- W4367051844 hasConcept C121332964 @default.
- W4367051844 hasConcept C127413603 @default.
- W4367051844 hasConcept C138885662 @default.
- W4367051844 hasConcept C163258240 @default.
- W4367051844 hasConcept C165801399 @default.
- W4367051844 hasConcept C172385210 @default.
- W4367051844 hasConcept C192562407 @default.
- W4367051844 hasConcept C21036866 @default.
- W4367051844 hasConcept C2361726 @default.
- W4367051844 hasConcept C41895202 @default.
- W4367051844 hasConcept C43214815 @default.
- W4367051844 hasConcept C49040817 @default.
- W4367051844 hasConcept C62520636 @default.
- W4367051844 hasConceptScore W4367051844C119599485 @default.
- W4367051844 hasConceptScore W4367051844C121332964 @default.
- W4367051844 hasConceptScore W4367051844C127413603 @default.
- W4367051844 hasConceptScore W4367051844C138885662 @default.
- W4367051844 hasConceptScore W4367051844C163258240 @default.
- W4367051844 hasConceptScore W4367051844C165801399 @default.
- W4367051844 hasConceptScore W4367051844C172385210 @default.
- W4367051844 hasConceptScore W4367051844C192562407 @default.
- W4367051844 hasConceptScore W4367051844C21036866 @default.
- W4367051844 hasConceptScore W4367051844C2361726 @default.
- W4367051844 hasConceptScore W4367051844C41895202 @default.
- W4367051844 hasConceptScore W4367051844C43214815 @default.
- W4367051844 hasConceptScore W4367051844C49040817 @default.
- W4367051844 hasConceptScore W4367051844C62520636 @default.
- W4367051844 hasFunder F4320321001 @default.
- W4367051844 hasFunder F4320335777 @default.
- W4367051844 hasIssue "5" @default.
- W4367051844 hasLocation W43670518441 @default.
- W4367051844 hasLocation W43670518442 @default.
- W4367051844 hasLocation W43670518443 @default.
- W4367051844 hasLocation W43670518444 @default.
- W4367051844 hasOpenAccess W4367051844 @default.
- W4367051844 hasPrimaryLocation W43670518441 @default.
- W4367051844 hasRelatedWork W1968313569 @default.
- W4367051844 hasRelatedWork W2001372352 @default.
- W4367051844 hasRelatedWork W2058676402 @default.
- W4367051844 hasRelatedWork W2168852484 @default.
- W4367051844 hasRelatedWork W2329285141 @default.
- W4367051844 hasRelatedWork W2544865298 @default.
- W4367051844 hasRelatedWork W2751737955 @default.
- W4367051844 hasRelatedWork W2902546961 @default.
- W4367051844 hasRelatedWork W4233145072 @default.
- W4367051844 hasRelatedWork W4313653414 @default.
- W4367051844 hasVolume "14" @default.
- W4367051844 isParatext "false" @default.
- W4367051844 isRetracted "false" @default.
- W4367051844 workType "article" @default.