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• W4367146563 abstract "In this work, a normally-OFF <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$beta $ </tex-math></inline-formula> -Ga2O3 MOSFET enabled by charge trapping layer (CTL) is demonstrated for the first time. The CTL consists of Al:HfO <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$_{x} 1$ </tex-math></inline-formula> :5 and the tunneling barrier (TB) is Al2O3/HfOx/Al2O3 stack. The developed Ga2O3 MOSFET exhibits a wide <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>${V}_{text {th}}$ </tex-math></inline-formula> tuning range to normally-OFF operation and a long-lasting retention characteristic of −0.3 V (ten years). The device obtains a breakdown voltage (BV) of 1815 V, showing high reverse blocking capability based on the proposed CTL technique. <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>${I}$ </tex-math></inline-formula> – <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>${V}$ </tex-math></inline-formula> and <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>${C}$ </tex-math></inline-formula> – <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>${V}$ </tex-math></inline-formula> analyses are carried out under various temperatures to study the mechanism and explore the charge trapping and de-trapping processes. The results indicate a promising method to achieve E-mode operation for Ga2O3 MOSFET with low charge loss and stable <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>${V}_{text {th}}$ </tex-math></inline-formula> ." @default.
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• W4367146563 date "2023-06-01" @default.
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• W4367146563 title "Charge Trapping Layer Enabled Normally-Off <i>β</i>-Ga₂O₃ MOSFET" @default.
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• W4367146563 doi "https://doi.org/10.1109/ted.2023.3267758" @default.
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