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- W4367277015 abstract "Forming gas annealing (FGA) in a deuterium (D2) ambient is crucial importance to MOSFET fabrication technologies related to alleviation of trap state at Si/SiO2 interface as well as oxide bulk by <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$D_{2}$ </tex-math></inline-formula> passivation. In this study, post-metal annealing (PMA) process with <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$D_{2}$ </tex-math></inline-formula> and <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$N_{2}$ </tex-math></inline-formula> gases under a high-pressure condition was conducted to verify performance enhancement in gate-enclosed FETs. We explored the trap behaviors inside the bandgap of Si and <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$SiO_{2}$ </tex-math></inline-formula> by quantitatively using capacitance-voltage ( <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>${C}$ </tex-math></inline-formula> – <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>${V}$ </tex-math></inline-formula> ) characteristics. Furthermore, the change of deuterium and nitrogen ions in Si/SiO2 gate stack before and after the PMA process was directly investigated by time-of-flight secondary ion mass spectroscopy (ToF-SIMS) depthprofiling technique." @default.
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- W4367277015 date "2023-06-01" @default.
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- W4367277015 title "Comprehensive Study on Trap-induced Bias Instability via High-Pressure D2 and N2 Annealing" @default.
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- W4367277015 doi "https://doi.org/10.1109/tdmr.2023.3270920" @default.
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