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• W4367301665 endingPage "104890" @default.
• W4367301665 startingPage "104890" @default.
• W4367301665 abstract "GeTe is an important medium-temperature thermoelectric material, and Co is often used as a diffusion barrier layer. This study examines the interfacial reactions between Co and GeTe to verify the suitability of Co as a barrier layer. This study also determines the phase diagram of the Co-Ge-Te ternary system to provide basic material system knowledge and for better understanding the interfacial reactions. The Co-Ge-Te phase diagram is determined based on the experimental results of this study, those related in the literature, and the phase diagrams of its three binary constituent systems. The Co/GeTe couples are prepared by plating Co layer on the GeTe substrate, and then reacted at 500 °C and 400 °C. It is found the Ge0.5Te0.5 is of rhombohedral structure at 500 °C, gradually transforms to a cubic structure with increasing Te content, and the results differ from those in the literature. There are 15 single phases at 500 °C and 400 °C in the Co-Ge-Te ternary system, including two ternary compounds, Co2Ge3Te3 and CoGeTe. In the Co/GeTe couples reacting at 500 °C for 14 days, Co2Te3, Co5Ge3, CoGe and CoGeTe are formed, and the thickness of the reaction layer is about 80 μm. At 400 °C for 50 days, CoGe2, Co5Ge3 and Co2Te3 are formed, and the thickness of the reaction layer is about 12 μm. At both 500 °C and 400 °C, Co is the primary diffusion species in the Co/GeTe reaction couples. The results suggest Co is not a suitable barrier layer for GeTe at 500℃." @default.
• W4367301665 created "2023-04-29" @default.
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• W4367301665 date "2023-05-01" @default.
• W4367301665 modified "2023-10-14" @default.
• W4367301665 title "Co/GeTe interfacial reactions and Co-Ge-Te phase equilibria" @default.
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• W4367301665 doi "https://doi.org/10.1016/j.jtice.2023.104890" @default.
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