Matches in SemOpenAlex for { <https://semopenalex.org/work/W4367316810> ?p ?o ?g. }
- W4367316810 endingPage "2033" @default.
- W4367316810 startingPage "2033" @default.
- W4367316810 abstract "Thermal dissipation is an important issue for power devices. In this work, the impact of thermal effects on the performance of Cu electroplated GaN-based high-electron-mobility transistors (HEMTs) are considered. Electrical, thermometry and micro-Raman characterization techniques were used to correlate the effects of improved heat dissipation on device performance for GaN HEMTs with different thicknesses of Si substrate (50, 100, 150 μm), with and without an additional electroplated Cu layer. GaN HEMTs on electroplated Cu on Si (≤50 μm) demonstrate an enhanced on/off current ratio compared to bare Si substrate by a factor of ~400 (from 9.61 × 105 to 4.03 × 108). Of particular importance, surface temperature measurements reveal a much lower channel temperature for thinner HEMT devices with electroplated Cu samples compared to those without." @default.
- W4367316810 created "2023-04-29" @default.
- W4367316810 creator A5027950703 @default.
- W4367316810 creator A5072372908 @default.
- W4367316810 creator A5079045257 @default.
- W4367316810 date "2023-04-27" @default.
- W4367316810 modified "2023-10-18" @default.
- W4367316810 title "Thermal Performance of Cu Electroplated GaN/AlGaN High-Electron-Mobility Transistors with Various-Thickness Si Substrates" @default.
- W4367316810 cites W1991580832 @default.
- W4367316810 cites W2000595918 @default.
- W4367316810 cites W2001200374 @default.
- W4367316810 cites W2011192375 @default.
- W4367316810 cites W2014820895 @default.
- W4367316810 cites W2018825318 @default.
- W4367316810 cites W2026919957 @default.
- W4367316810 cites W2036680871 @default.
- W4367316810 cites W2039464525 @default.
- W4367316810 cites W2048099182 @default.
- W4367316810 cites W2077371130 @default.
- W4367316810 cites W2099809278 @default.
- W4367316810 cites W2113488710 @default.
- W4367316810 cites W2119418964 @default.
- W4367316810 cites W2137778525 @default.
- W4367316810 cites W2141981815 @default.
- W4367316810 cites W2147297479 @default.
- W4367316810 cites W2159544913 @default.
- W4367316810 cites W2169219063 @default.
- W4367316810 cites W2170374032 @default.
- W4367316810 cites W2289031692 @default.
- W4367316810 cites W2301906601 @default.
- W4367316810 cites W2495244888 @default.
- W4367316810 cites W2593078491 @default.
- W4367316810 cites W2618867929 @default.
- W4367316810 cites W2626677857 @default.
- W4367316810 cites W2767660484 @default.
- W4367316810 cites W2786893101 @default.
- W4367316810 cites W2883282107 @default.
- W4367316810 cites W2905153293 @default.
- W4367316810 cites W2939909201 @default.
- W4367316810 cites W2943914256 @default.
- W4367316810 cites W2964602799 @default.
- W4367316810 cites W2980017732 @default.
- W4367316810 cites W2994896140 @default.
- W4367316810 cites W2997557234 @default.
- W4367316810 cites W2998234575 @default.
- W4367316810 cites W3011385351 @default.
- W4367316810 cites W3122444417 @default.
- W4367316810 cites W3123991679 @default.
- W4367316810 cites W3138069644 @default.
- W4367316810 cites W4289825320 @default.
- W4367316810 cites W4295007608 @default.
- W4367316810 cites W4313823888 @default.
- W4367316810 cites W4367662410 @default.
- W4367316810 cites W4376522320 @default.
- W4367316810 doi "https://doi.org/10.3390/electronics12092033" @default.
- W4367316810 hasPublicationYear "2023" @default.
- W4367316810 type Work @default.
- W4367316810 citedByCount "0" @default.
- W4367316810 crossrefType "journal-article" @default.
- W4367316810 hasAuthorship W4367316810A5027950703 @default.
- W4367316810 hasAuthorship W4367316810A5072372908 @default.
- W4367316810 hasAuthorship W4367316810A5079045257 @default.
- W4367316810 hasBestOaLocation W43673168101 @default.
- W4367316810 hasConcept C106782819 @default.
- W4367316810 hasConcept C111368507 @default.
- W4367316810 hasConcept C119599485 @default.
- W4367316810 hasConcept C127313418 @default.
- W4367316810 hasConcept C127413603 @default.
- W4367316810 hasConcept C159985019 @default.
- W4367316810 hasConcept C162057924 @default.
- W4367316810 hasConcept C165801399 @default.
- W4367316810 hasConcept C172385210 @default.
- W4367316810 hasConcept C192562407 @default.
- W4367316810 hasConcept C2777289219 @default.
- W4367316810 hasConcept C2779227376 @default.
- W4367316810 hasConcept C49040817 @default.
- W4367316810 hasConcept C51807945 @default.
- W4367316810 hasConceptScore W4367316810C106782819 @default.
- W4367316810 hasConceptScore W4367316810C111368507 @default.
- W4367316810 hasConceptScore W4367316810C119599485 @default.
- W4367316810 hasConceptScore W4367316810C127313418 @default.
- W4367316810 hasConceptScore W4367316810C127413603 @default.
- W4367316810 hasConceptScore W4367316810C159985019 @default.
- W4367316810 hasConceptScore W4367316810C162057924 @default.
- W4367316810 hasConceptScore W4367316810C165801399 @default.
- W4367316810 hasConceptScore W4367316810C172385210 @default.
- W4367316810 hasConceptScore W4367316810C192562407 @default.
- W4367316810 hasConceptScore W4367316810C2777289219 @default.
- W4367316810 hasConceptScore W4367316810C2779227376 @default.
- W4367316810 hasConceptScore W4367316810C49040817 @default.
- W4367316810 hasConceptScore W4367316810C51807945 @default.
- W4367316810 hasIssue "9" @default.
- W4367316810 hasLocation W43673168101 @default.
- W4367316810 hasOpenAccess W4367316810 @default.
- W4367316810 hasPrimaryLocation W43673168101 @default.
- W4367316810 hasRelatedWork W1561507295 @default.
- W4367316810 hasRelatedWork W2017691213 @default.
- W4367316810 hasRelatedWork W2062299408 @default.