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- W4372080425 abstract "Low-temperature device-quality GaAs layers with high resistivity were obtained by pulsed laser deposition. The properties of GaAs layers are sensitive to the process temperature. At a growth temperature of less than 300 o C, the layers have low electron mobility and a shift of the GaAs stoichiometry towards the region of arsenic enrichment at a level of 1-2 at.%. At a growth temperature of more than 300 o C, the layers show an improved crystalline quality. The dependence of the relative intensity of the As 3d photoelectron line on the growth temperature confirms this trend with a change in the growth temperature. Keywords: pulsed laser deposition, Hall effect, X-ray photoelectron spectroscopy." @default.
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- W4372080425 date "2023-01-01" @default.
- W4372080425 modified "2023-10-16" @default.
- W4372080425 title "Effect of Growth Temperature on the Physicochemical Properties of Low-Temperature GaAs Layers Fabricated by Pulsed Laser Deposition" @default.
- W4372080425 doi "https://doi.org/10.21883/tpl.2023.02.55370.19372" @default.
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