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• W4376149158 abstract "Tensoelectric properties of the uniaxially deformed along the crystallographic direction [100] n-Ge single crystals, irradiated by the flows of electrons 5⋅1015el./cm2, 1⋅1016el./cm2, 2⋅1016el./cm2 and 5⋅1016el./cm2, with the energy of 10MeV, were investigated. Mechanisms of changes in resistivity and mobility of current carriers under the uniaxial deformation for the studied n-Ge single crystals based on the measurements of tenso-Hall effect and infrared Fourier spectroscopy were established.The presence of tensoresistance for n-Ge single crystals, irradiated by the flow of the electrons Ω≤1⋅1016el./cm2, is associated with changes under the uniaxial pressure of electron concentration in the conduction band and holes in the valence band due to a decrease of the ionization energy of the deep level EV+0.27eV of the radiation defects which belongs to the complexes VOiI2Ge, at the uniaxial deformation. A significant increase of the effective mobility of carriers current in uniaxially deformed single crystals n-Ge is primarily related to the deforming redistribution of electrons between the branch of ‘light’ holes and the level EV+0.27eV. For single crystals n-Ge irradiated by the flows of electrons Ω≥2⋅1016el./cm2, which lead to the n-p conversion of the conductivity type of germanium, significant tensoresistance is observed only at the pressures P≤0.5GPa. In this case, the resistivity of n-Ge decreases both due to an increase in the concentration of holes and their mobility under the deformation. Mobility of holes does not depend on deformation for uniaxial pressures P>0.5GPa, and a slight decrease in the resistivity of the researched single crystals n-Ge is caused by an increase in their concentration. Radiation-induced tensosensitivity at the room temperature for single crystals n-Ge can be used in technologies for creating uniaxial pressure sensors based on germanium. Obtained radiation effect of a significant increase in the mobility of current carriers for the uniaxially deformed n-Ge single crystals can find its practical application in the creation of ‘germanium’ channels of n-MOSFET and p-MOSFET transistors." @default.
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• W4376149158 date "2023-05-11" @default.
• W4376149158 modified "2023-09-26" @default.
• W4376149158 title "Tensoelectric properties irradiated by the fast electrons n-Ge single crystals" @default.
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• W4376149158 doi "https://doi.org/10.1080/10420150.2023.2211195" @default.
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