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• W4376274132 abstract "For the creation of next-generation nanoscale devices, it is crucial to comprehend the carrier transport mechanisms in nanowires. Here, we examine how temperature affects the properties of GaN nanowire wrap-gate transistors (WGTs), which are made via a top-down technique. The predicted conductance in this transistor remains essentially unaltered up to a temperature of 240 K and then increases after that as the temperature rises. This is true for increasing temperature at gate voltages less than threshold voltage (Vgs < Vth). Sharp fluctuations happen when the temperature rises with a gate voltage of Vth < Vgs < VFB. The conductance steadily decreases with increasing temperature after increasing the gate bias to Vgs > VFB. These phenomena are possibly attributed to phonon and impurity scattering processes occurring on the surface or core of GaN nanowires." @default.
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• W4376274132 date "2023-05-12" @default.
• W4376274132 modified "2023-09-30" @default.
• W4376274132 title "Temperature-Dependent Carrier Transport in GaN Nanowire Wrap-Gate Transistor" @default.
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• W4376274132 doi "https://doi.org/10.3390/nano13101629" @default.
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