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W4376456427 abstract "This letter proposes C 2 FeRAM, a 2T2C/cell ferroelectric compute-in-memory (CiM) scheme for energy-efficient and high-reliability edge inference and transfer learning. With certain area overhead, C 2 FeRAM achieves the following highlights: (i) compared with FeFET/FeMFET, it achieves disturb-free CiM and much higher write endurance (equal to FeRAM), leading to <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$100times $ </tex-math></inline-formula> inference time with < 1% accuracy drop for VGG8 in CIFAR-10 dataset, along with the enhanced endurance for weight updates, e.g., CiM-based transfer learning; (ii) compared with 1T1C FeRAM inference cache, the achieved disturb-free feature and CiM capability in C 2 FeRAM lead to improvements of <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$4times $ </tex-math></inline-formula> energy, <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$200times $ </tex-math></inline-formula> speed, and 3.2e <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$5times $ </tex-math></inline-formula> life cycles. Such benefits highlight an intriguing solution for future intelligent edge AI." @default.
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W4376456427 date "2023-07-01" @default.
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W4376456427 title "A 2-Transistor-2-Capacitor Ferroelectric Edge Compute-in-Memory Scheme With Disturb-Free Inference and High Endurance" @default.
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W4376456427 doi "https://doi.org/10.1109/led.2023.3274362" @default.
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