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- W4376606670 abstract "DRAM devices are scaling down for decades to get advantages on higher density and cost effectiveness, however it is becoming more challenging to sustain the same (or improved) product quality within smaller dimension and storage capacitance. In particular, when the size decreases, the increase in the electric field and the decrease in the storage capacitance is inevitable, so a new structure change or extreme control of impurities is required. Chlorine is one of the most commonly used chemical element in DRAM fabrication process such as the etching and the deposition, however it makes interface traps and increases single-bit failures such as the retention failure and the bit flip by the row-hammering. In this paper, the effect of chlorine on actual characteristics was studied by measuring chlorine concentration and analyzing electrical characteristics. To reduce the damage from chlorine, we suggested three strategies and verified their effectiveness: (1) blocking the chlorine diffusion, (2) reducing the initial chlorine concentration in the storage capacitors, and (3) outgassing the chlorine by chemical reaction. We believe that if new schemes are applied using the above strategies, single bit characteristics can be improved." @default.
- W4376606670 created "2023-05-17" @default.
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- W4376606670 date "2023-03-01" @default.
- W4376606670 modified "2023-09-25" @default.
- W4376606670 title "Enhanced DRAM Single Bit Characteristics from Process Control of Chlorine" @default.
- W4376606670 doi "https://doi.org/10.1109/irps48203.2023.10118042" @default.
- W4376606670 hasPublicationYear "2023" @default.
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