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• W4376607814 abstract "In this article, we proposed a composite-barrier-metal–insulator–semiconductor-high electron mobility transistor (CB-MIS-HEMT), in which a thick Al <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink><i>x</i></sub> Ga <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$_{({1}-{x}{)}}text{N}$ </tex-math></inline-formula> with small Al mol fraction is implemented in the gate region to achieve both high threshold voltage ( <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>${V}_{text {th}}{)}$ </tex-math></inline-formula> and high electron mobility. A Al <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$_{{0}.{25}}$ </tex-math></inline-formula> Ga <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$_{{0}.{75}}text{N}$ </tex-math></inline-formula> /AlN, working as a second barrier, is set on the Al <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>x</sub> Ga <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$_{({1}-{x}{)}}text{N}$ </tex-math></inline-formula> -layer to maintain high 2DEG density in the access region. The thick Al <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink><i>x</i></sub> Ga <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$_{({1}-{x}{)}}text{N}$ </tex-math></inline-formula> in the gate region reduces the mobility degradation effects caused by the interface charges, acoustic phonon scattering, and surface roughness scattering. Combined with small Almol fraction design, both low specific ON-resistance (R <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>on,sp</sub> )and high <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>${V}_{text {th}}$ </tex-math></inline-formula> can be obtained simultaneously. An analytical model for the electron density in both the lower and upper channels as well as <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>${V}_{text {th}}$ </tex-math></inline-formula> is presented, which matches very well with the experimentally calibrated TCAD simulation. For a 600-V design, it shows that the electron mobility in the lower channel can be improved to 1255 cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> / <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$text{V}cdot text{s}$ </tex-math></inline-formula> , and at <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>${V}_{text {th}}$ </tex-math></inline-formula> around 2.5 V, R <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>on,sp</sub> of the CB-MIS-HEMT can be reduced by 33.6% compared to a conventional recess-gate MIS-HEMT." @default.
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• W4376607814 date "2023-07-01" @default.
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• W4376607814 title "Investigation of a Novel Enhancement-Mode Al_0.25Ga_0.75N/AlN/Al<i> _X </i>Ga_(1-X)N/GaN MIS-HEMT for High <i>V_th </i> and Low <i>R</i> _on,sp" @default.
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• W4376607814 doi "https://doi.org/10.1109/ted.2023.3271280" @default.
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