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- W4377099314 endingPage "131" @default.
- W4377099314 startingPage "117" @default.
- W4377099314 abstract "The study of defects and strain in GaN substrates and epilayers for vertical device development using synchrotron X-ray topography techniques is presented. Synchrotron monochromatic beam X-ray topography (SMBXT) studies show that ammonothermal-grown GaN substrate wafers have the lowest dislocation densities while patterned hydride vapor phase epitaxy (HVPE) GaN reveal a starkly heterogeneous distribution of dislocations with large areas containing low threading dislocation densities and HVPE GaN substrates contain high dislocation densities. Epitaxial growth does not nucleate new defects but interactions of dislocations with point defects can cause changes in dislocation configurations. Rocking curve Analysis by Dynamical Simulation (RADS) is shown to be effective in analysis of implantation by correlating the depth profile of strain with the doping profile. Removal of lattice damage induced by implantation requires annealing with proper capping or under high pressures to limit loss of material and lattice distortion. Inductively coupled plasma (ICP) etching may introduce strain in GaN material that can be partially recovered by TBCl etching. Diffusion doping does not introduce new strains in GaN material while neutron transmutation doping at low levels can lead to curing of defects while higher levels lead to irradiation damage and nucleation of new defects." @default.
- W4377099314 created "2023-05-20" @default.
- W4377099314 creator A5025832938 @default.
- W4377099314 creator A5030839263 @default.
- W4377099314 creator A5031274975 @default.
- W4377099314 creator A5041586518 @default.
- W4377099314 creator A5085804402 @default.
- W4377099314 creator A5021045888 @default.
- W4377099314 date "2023-05-19" @default.
- W4377099314 modified "2023-09-29" @default.
- W4377099314 title "(Invited) Application of Synchrotron X-Ray Topography Techniques to the Analysis of Defect Microstructures in Bulk GaN Substrates and Epilayers for Power Devices" @default.
- W4377099314 doi "https://doi.org/10.1149/11102.0117ecst" @default.
- W4377099314 hasPublicationYear "2023" @default.
- W4377099314 type Work @default.
- W4377099314 citedByCount "0" @default.
- W4377099314 crossrefType "journal-article" @default.
- W4377099314 hasAuthorship W4377099314A5021045888 @default.
- W4377099314 hasAuthorship W4377099314A5025832938 @default.
- W4377099314 hasAuthorship W4377099314A5030839263 @default.
- W4377099314 hasAuthorship W4377099314A5031274975 @default.
- W4377099314 hasAuthorship W4377099314A5041586518 @default.
- W4377099314 hasAuthorship W4377099314A5085804402 @default.
- W4377099314 hasConcept C100460472 @default.
- W4377099314 hasConcept C110738630 @default.
- W4377099314 hasConcept C120665830 @default.
- W4377099314 hasConcept C121332964 @default.
- W4377099314 hasConcept C159122135 @default.
- W4377099314 hasConcept C159985019 @default.
- W4377099314 hasConcept C160671074 @default.
- W4377099314 hasConcept C164675345 @default.
- W4377099314 hasConcept C178790620 @default.
- W4377099314 hasConcept C185592680 @default.
- W4377099314 hasConcept C192562407 @default.
- W4377099314 hasConcept C21368211 @default.
- W4377099314 hasConcept C2779227376 @default.
- W4377099314 hasConcept C49040817 @default.
- W4377099314 hasConcept C57863236 @default.
- W4377099314 hasConcept C61048295 @default.
- W4377099314 hasConcept C8010536 @default.
- W4377099314 hasConcept C81626474 @default.
- W4377099314 hasConceptScore W4377099314C100460472 @default.
- W4377099314 hasConceptScore W4377099314C110738630 @default.
- W4377099314 hasConceptScore W4377099314C120665830 @default.
- W4377099314 hasConceptScore W4377099314C121332964 @default.
- W4377099314 hasConceptScore W4377099314C159122135 @default.
- W4377099314 hasConceptScore W4377099314C159985019 @default.
- W4377099314 hasConceptScore W4377099314C160671074 @default.
- W4377099314 hasConceptScore W4377099314C164675345 @default.
- W4377099314 hasConceptScore W4377099314C178790620 @default.
- W4377099314 hasConceptScore W4377099314C185592680 @default.
- W4377099314 hasConceptScore W4377099314C192562407 @default.
- W4377099314 hasConceptScore W4377099314C21368211 @default.
- W4377099314 hasConceptScore W4377099314C2779227376 @default.
- W4377099314 hasConceptScore W4377099314C49040817 @default.
- W4377099314 hasConceptScore W4377099314C57863236 @default.
- W4377099314 hasConceptScore W4377099314C61048295 @default.
- W4377099314 hasConceptScore W4377099314C8010536 @default.
- W4377099314 hasConceptScore W4377099314C81626474 @default.
- W4377099314 hasIssue "2" @default.
- W4377099314 hasLocation W43770993141 @default.
- W4377099314 hasOpenAccess W4377099314 @default.
- W4377099314 hasPrimaryLocation W43770993141 @default.
- W4377099314 hasRelatedWork W1986832744 @default.
- W4377099314 hasRelatedWork W2003777234 @default.
- W4377099314 hasRelatedWork W2053306574 @default.
- W4377099314 hasRelatedWork W2054686318 @default.
- W4377099314 hasRelatedWork W2056948894 @default.
- W4377099314 hasRelatedWork W2071515526 @default.
- W4377099314 hasRelatedWork W2085812789 @default.
- W4377099314 hasRelatedWork W2384102624 @default.
- W4377099314 hasRelatedWork W2788164453 @default.
- W4377099314 hasRelatedWork W3173669543 @default.
- W4377099314 hasVolume "111" @default.
- W4377099314 isParatext "false" @default.
- W4377099314 isRetracted "false" @default.
- W4377099314 workType "article" @default.