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- W4377697273 abstract "As the advancement of the semiconductor technology, the development of other technology such as packaging and bonding advances. Cu-SiO <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</inf> hybrid bonding, used for 3D-IC and CMOS sensor, is also required for further good physical performance due to development of the technology. Additionally, in semiconductor field, low temperature bonding is regarded as an important technology. To meet these requirement, we have optimized copper grain characteristic. By optimizing plating condition and additives, we have achieved to making large copper grain at low temperature. Cu-SiO <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</inf> hybrid bonding using large copper grain shows good physical properties such as quite low electrical resistance." @default.
- W4377697273 created "2023-05-24" @default.
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- W4377697273 date "2023-04-19" @default.
- W4377697273 modified "2023-10-17" @default.
- W4377697273 title "Physical Properties of Large Cu Grain and Application to Cu-SiO2 Hybrid Bonding" @default.
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- W4377697273 doi "https://doi.org/10.23919/icep58572.2023.10129755" @default.
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