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- W4377698511 abstract "Nanotwinned Cu (NT-Cu) with highly (111)-oriented surface is beneficial to achieve low temperature Cu-Cu bonding. Nonetheless, it is difficult to deposit NT-Cu in Cu/SiO <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</inf> in small damascene vias. To overcome the restrict of the sidewall effect that may reduce surface (111) ratio of the vias, an optimized electrodeposition (ECD) approach was carried out. By tuning the electroplating temperatures and waveforms, we can successfully deposit NT-Cu into fine-pitch Cu/SiO <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</inf> vias. A bottom-up growing mode of NT-Cu can effectively reduce sidewall effect. Surface (111) ratio exceeds 80% and 55% for 8-µm and 2-µm Cu/SiO <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</inf> vias in diameter, respectively. Moreover, a theoretical model of predicting (111) ratio in small Cu/SiO <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</inf> vias based on the optimized ECD approach was proposed." @default.
- W4377698511 created "2023-05-24" @default.
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- W4377698511 date "2023-04-19" @default.
- W4377698511 modified "2023-09-25" @default.
- W4377698511 title "Fabrication of Highly (111)-oriented Nanotwinned Cu in Fine-pitch Vias for Cu/SiO<sub>2</sub> Hybrid Bonding" @default.
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- W4377698511 doi "https://doi.org/10.23919/icep58572.2023.10129678" @default.
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