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- W4377703181 abstract "This article describes the synthesis, fabrication, and analysis of two heterojunction devices based on low-cost CdSe nanocrystalline thin films that have undergone solution processing. A schottky diode is created utilizing a PVA-capped n-CdSe thin film on an aluminium substrate, and a diode structure of CdSe/InSe/Al is obtained on indium coated glass substrates using the chemical bath deposition approach. Diffraction analysis and TEM studies reveal that the deposited thin films have a zinc mix structure that is nanocrystalline in nature. The response of InSe/CdSe diode has been investigated using forward bias current measurements at room temperature under dark and illumination conditions. Accordingly, ideality factor, built-in voltage, breakdown voltage, saturation current and breakdown current of the diode has been calculated. Acoustical and capacitance-voltage properties of Al/PVA:n- CdSe schottky diode has been studied at room temperature. Under reverse bias voltage, it has been possible to calculate a number of characteristics, including carrier concentration, built-in voltage, barrier height, and depletion layer width." @default.
- W4377703181 created "2023-05-24" @default.
- W4377703181 creator A5043548511 @default.
- W4377703181 date "2023-02-24" @default.
- W4377703181 modified "2023-10-17" @default.
- W4377703181 title "Nanocrystalline Heterojunction Device Fabrication and Characterization using CdSe" @default.
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- W4377703181 doi "https://doi.org/10.1109/delcon57910.2023.10127410" @default.
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