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- W4378675734 abstract "Catalytic growth of ultrathin silicon nanowires (SiNWs) provides ideal 1D channel materials for the construction of high-performance field effect transistors, where the diameter, uniformity and crystalline qualities are of utmost importance. In this work, a high-fidelity moulding growth of orderly ultrathin monocrystalline SiNWs, with diameter of 17±2nm, has been accomplished within tightly confined nanogrooves. A continuous and deterministic groove-width-transition or squeezing strategy has also been developed to accomplish an effective cross-section tailoring of the as-grown SiNW channels, while enabling a close-to-unity growth filling rate within the guiding grooves. Finally, a size-dependent adatom-searching model is proposed to explain how a monocrystalline SiNWs can be obtained even at such a low growth temperature of <350 ℃. These results indicate a feasible catalytic growth fabrication route to implement monolithic 3D integration of advanced in-memory-computing and neuromorphic electronics." @default.
- W4378675734 created "2023-05-30" @default.
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- W4378675734 date "2023-10-01" @default.
- W4378675734 modified "2023-10-15" @default.
- W4378675734 title "High-fidelity Moulding Growth and Cross-section Shaping of Ultrathin Monocrystalline Silicon Nanowires" @default.
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- W4378675734 doi "https://doi.org/10.1016/j.apsusc.2023.157635" @default.
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