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- W4378697002 abstract "This paper presents a highly compact Ku band 130nm SiGe power amplifier (PA) in a double balanced architecture. A highly compact low-loss 4 to 1 combiner is associated with a cascode topology to provide a power combination up to 1W and a high resilience to the standing wave ratio (SWR) from 2:1 to 4:1. A high thermal stability up to 120°C is ensured by an advanced configuration of transistors. A choices innovative set on the cascode stage design and layout improves the control of the impact ionization and selfheating. A driver stage allows the circuit to achieve over 20 dB of linear gain. At 30°C, 18 GHz and a supply voltage ( <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$text{V}_{mathrm {SUPPLY}}$ </tex-math></inline-formula> ) of 4.2V, this power amplifier achieves a measured saturated power ( <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$text{P}_{mathrm {sat}}$ </tex-math></inline-formula> ) of 30 dBm for an output power at the 1dB compression point (OCP <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$_{mathrm {1dB}}$ </tex-math></inline-formula> ) of 28.8 dBm, a maximum power added efficiency (PAE) of 23.5% and a linear gain of 21.4 dB. The gain difference across 2:1 SWR phase variations is only 0.8 dB. The active area of the die chip is only 1.13 mm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> ." @default.
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- W4378697002 date "2023-07-01" @default.
- W4378697002 modified "2023-09-26" @default.
- W4378697002 title "Ku Band SiGe Power Amplifier With High Output Power and SWR Robustness Up to 120 °C" @default.
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- W4378697002 doi "https://doi.org/10.1109/tcsi.2023.3274496" @default.
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