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- W4378805925 abstract "We have achieved subthreshold slope (SS) values close to the thermal limited values in GaAs metal-oxide-semiconductor field-effect transistors (MOSFETs). The low interfacial trap density (D <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>it</inf> ) at the in-situ prepared Y <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</inf> O <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</inf> /GaAs(001) has attributed to these low SS values of 63 mV/dec at 300 K and 18 mV/dec at 77 K, respectively. The SS value of our GaAs MOSFETs at 77 K is comparable to those of the SiO <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</inf> /Si MOSFETs at 77 K and InGaAs high-electron-mobility transistors (HEMTs) at 5K, suggesting the GaAs MOSFETs for cryogenic low-power application." @default.
- W4378805925 created "2023-06-01" @default.
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- W4378805925 date "2023-04-17" @default.
- W4378805925 modified "2023-09-26" @default.
- W4378805925 title "Attainment of nearly thermally limited subthreshold slope in GaAs MOSFETs with in-situ Y<sub>2</sub>O<sub>3</sub>gate dielectric for cryogenic electronics" @default.
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- W4378805925 doi "https://doi.org/10.1109/vlsi-tsa/vlsi-dat57221.2023.10134031" @default.
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