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- W4378806007 abstract "In this work, we have achieved record-low interfacial trap densities of <tex xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>$(2-4) times 10^{10}$</tex> eV <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>−1</sup> cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>−2</sup> in the Y <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</inf> O <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</inf> /epi-Si/Ge(001) gate stacks, particularly low <tex xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>$D_{it}$</tex> less than <tex xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>$1 times 10^{11}$</tex> eV <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>−1</sup> cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>−2</sup> near the conduction band region. Synchrotron radiation photoemission was used to probe the interfacial bonding with atomic hydrogen exposure to elucidate the effect of post-metallization annealing in forming gas. After exposure of atomic hydrogen at 400°C, a great reduction of GeO <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>x</inf> and a great increase of SiO <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>x</inf> formation, which is stabilized in Si <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3+</sup> states, suggest that the Y-O-Si formation attributed to the low <tex xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>$D_{it}$</tex> ." @default.
- W4378806007 created "2023-06-01" @default.
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- W4378806007 date "2023-04-17" @default.
- W4378806007 modified "2023-09-23" @default.
- W4378806007 title "Low D<sub>it</sub> of $(2-4)times 10^{10}$ using Y<sub>2</sub>O<sub>3</sub>/epi-Si/Ge Gate Stacks" @default.
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- W4378806007 doi "https://doi.org/10.1109/vlsi-tsa/vlsi-dat57221.2023.10134479" @default.
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