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• W4378843071 abstract "This work reports the first switching performance characterization of a 650 V NexGen's Vertical GaN <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>TM</sup> fin-channel junction field effect transistor (Fin-JFET) fabricated on 4-inch GaN-on-GaN wafer. Compared to similarly-rated GaN HEMT and SiC MOSFET, the GaN Fin-JFET has smaller specific on-resistance, die size, and output capacitance ( <tex xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>$C_{text{oss}}$</tex> ). To exploit these merits in switching applications, an RC interface gate driver was selected with the driving strategy optimized by switching transient analysis. In the GaN Fin-JFET, the gate-to-drain capacitance ( <tex xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>$C_{text{GD}}$</tex> ) dominates <tex xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>$C_{text{oss}}$</tex> . Accordingly, the positive gate driver input voltage ( <tex xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>$V_{G}^{+}$</tex> ) was found to be critical to enable a fast gate charging for the Fin-JFET. Increasing <tex xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>$V_{G}^{+}$</tex> from 8 V to 12 V allowed for a considerable reduction in the fall time and turn-on energy ( <tex xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>$E_{text{ON}}$</tex> ). Compared to similarly-rated GaN HEMTs and SiC MOSFETs, the vertical GaN Fin-JFET shows smaller turn-off energy ( <tex xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>$E_{text{OFF}}$</tex> ) and similar <tex xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>$E_{text{ON}}$</tex> , suggesting its good promise for soft switching applications. Finally, a zero-voltage switching converter based on the GaN Fin-JFET half bridge was demonstrated with a switching frequency up to 1 MHz, in which the Fin-JFET's <tex xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>$E_{text{OFF}}$</tex> was extracted to be 1.7 µJunder the 400 V/6 A switching condition." @default.
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• W4378843071 date "2023-03-19" @default.
• W4378843071 modified "2023-10-15" @default.
• W4378843071 title "Switching Performance Evaluation of 650 V Vertical GaN Fin JFET" @default.
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• W4378843071 doi "https://doi.org/10.1109/apec43580.2023.10131473" @default.
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