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- W4378904920 abstract "This work studies the static-state and dynamic switch performance of trench profile with thick bottom oxide (TBOX) in SiC trench MOSFET. With thicker bottom oxide thickness, electric field at the bottom of SiC trench reduced and have the same threshold voltage, but Ron, sp for SiC MOSFET with <tex xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>$0.5 mumathrm{m}$</tex> TBOX slightly 3.2% increase than that without TBOX. Then, SiC MOSFET with <tex xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>$0.5 mumathrm{m}$</tex> TBOX has lower gate-to-drain capacitance (Cgd) and gate-to-source capacitance (Cgs) with 30.3% and 7.3% reduction, respectively. For dynamic switch performance, both power consumption and switch performance reduce by thicker TBOX thickness." @default.
- W4378904920 created "2023-06-01" @default.
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- W4378904920 date "2023-04-17" @default.
- W4378904920 modified "2023-09-26" @default.
- W4378904920 title "Study of SiC trench MOSFET switching performance" @default.
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- W4378904920 doi "https://doi.org/10.1109/vlsi-tsa/vlsi-dat57221.2023.10134501" @default.
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