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• W4378905554 abstract "Silicon carbide (SiC) metal-oxide semiconductor (MOS) power devices such as metal-oxide semiconductor field-effect transistors (MOSFETs) require a stable and low defect-density interface, and a high-quality dielectric, for good device performance and reliability. Notably, the interface and dielectric properties determine the threshold voltage stability, the field-effect channel mobility, and the device lifetime as limited by dielectric breakdown in both the forward on-state and reverse blocking conditions. Here we discuss the present state of SiC MOS processing and properties and point to directions for future development. Important items to address are: 1) interface passivation approaches; 2) dielectrics; 3) device design; and 4) in-depth measurements of the interface quality and reliability." @default.
• W4378905554 created "2023-06-01" @default.
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• W4378905554 date "2023-05-31" @default.
• W4378905554 modified "2023-10-18" @default.
• W4378905554 title "Outlook for Dielectric/SiC Interfaces for Future Generation MOSFETs" @default.
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• W4378905554 doi "https://doi.org/10.4028/p-3w3s88" @default.
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