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- W4378905594 abstract "Semiconductor manufacturers and researchers have recently revealed that under specific bipolar gate switching conditions SiC MOSFETs exhibit parameter drift dynamics different from those typically observed in static qualification stress tests. In response to this finding, we present an approach for assessing the worst-case drift of data-sheet-relevant electrical parameters in a simple and transparent manner for a large variety of application profiles. We also introduce an empirical model that may explain the drift dynamics observed under gate switching stress; and discuss a recently developed interface characterization technique that has the potential to reveal the nature of point defects at the SiC/SiO 2 interface presumably related to the gate switching instability in SiC MOSFETs." @default.
- W4378905594 created "2023-06-01" @default.
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- W4378905594 date "2023-05-31" @default.
- W4378905594 modified "2023-09-30" @default.
- W4378905594 title "Assessing, Controlling and Understanding Parameter Variations of SiC Power MOSFETs in Switching Operation" @default.
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- W4378905594 doi "https://doi.org/10.4028/p-l30l6n" @default.
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