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- W4379194143 abstract "Semiconducting grade copper nitride(Cu3N) nanowires have been fabricated using a simple and low-cost method. The standard technique for fabricating Cu3N nanowires is physical methods and this is costly due to the involvement of capital equipment and recurring input. In the present method the Cu3N nanowires have been fabricated using chemical spray pyrolysis of thiourea and ammonium hydroxide over hot copper (Cu) foil substrate surface. The present process involves meager capital equipment and low recurring input. Studies on the quality of nanowires fabricated by the present method have been conducted using various molar concentration of spray solution and the ambient temperature of Cu substrates. The structural analysis indicated about the formation of cubic Cu3N. The optical analysis indicated about the low absorption in UV range and enhanced absorption in visible and NIR ranges with variation of direct and indirect bandgap of nanowire ranging from 1.5 to 1.79 eV. The light dependent resistance of the fabricated nanowires was tested and indicated its applicability in usage as light sensing devices. The result obtained so far is similar with that of Cu3N nanowires fabricated by physical deposition method. The present method for fabrication of Cu3N nanowires is simple and can be adopted by industries for large scale fabrication of nanowires for various device applications. Detailed fabrication technique and various properties of the nanowires are discussed in the text of the paper." @default.
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- W4379194143 date "2023-09-01" @default.
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- W4379194143 title "A novel method for fabricating semiconducting monocrystalline copper nitride nanowires for optoelectronic applications" @default.
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- W4379194143 doi "https://doi.org/10.1016/j.jcrysgro.2023.127307" @default.
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